 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 1 APRIL 94 FEATURES * 25 Volt VCEO * 5 Amps continuous current * Up to 20 Amps peak current * Very low saturation voltage * High Gain * Ptot=1.2 Watts ZTX869 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Practical Power Dissipation* Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptotp Ptot Tj:Tstg 60 25 6 20 5 1.58 1.2 E-Line TO92 Compatible VALUE UNIT V V V A A W W C -55 to +200 *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltag Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO ICER R 1K IEBO VCE(sat) 25 50 100 180 880 3-306 MIN. 60 60 25 6 TYP. 120 120 35 8 50 1 50 1 10 50 80 200 220 950 MAX. UNIT V V V V nA nA nA mV mV mV mV mV CONDITIONS. IC=100A IC=1A, RB 1K IC=10mA* IE=100A VCB=50V VCB=50V, Tamb=100C VCB=50V VCB=50V, Tamb=100C VEB=6V IC=0.5A, IB=10mA* IC=1A, IB=10mA* IC=2A, IB=100mA* IC=5A, IB=100mA* IC=5A, IB=100mA* A A Base-Emitter Saturation Voltage VBE(sat) ZTX869 ELECTRICAL CHARACTERISTICS (at Tamb = 25C) PARAMETER Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Switching Times SYMBOL VBE(on) hFE 300 300 250 40 MIN. TYP. 800 450 450 400 100 100 70 60 680 MHz pF ns ns MAX. 900 UNIT mV CONDITIONS. IC=5A, VCE=1V* IC=10mA, VCE=1V IC=1A, VCE=1V* IC=5A, VCE=1V* IC=20A, VCE=1V* IC=100mA, VCE=10V f=50MHz VCB=10V, f=1MHz IC=1A, IB1=100mA IB2=100mA, VCC=10V fT Cobo ton toff *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% THERMAL CHARACTERISTICS PARAMETER Thermal Resistance: Junction to Ambient Junction to Case SYMBOL Rth(j-amb) Rth(j-case) MAX. 150 50 UNIT C/W C/W Max Power Dissipation - (Watts) 4.0 Thermal Resistance (C/W) 150 t1 D.C. D=t1/tP 3.0 Ca se 100 te tP D=0.6 2.0 m 1.0 Amb ient te mpe ratu -40 -20 0 20 40 pe ra tu re 50 D=0.2 D=0.1 re 60 80 100 120 140 160 180 200 0 0.0001 D=0.05 Single Pulse 0.001 0.01 0.1 1 10 100 T -Temperature (C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-307 ZTX869 TYPICAL CHARACTERISTICS 1.5 1.6 hFE - Normalised Gain 675 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10 100 VCE=5V VCE=1V 225 450 1.0 IC/IB=10 IC/IB=100 0.5 0 0.01 0.1 1 10 100 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 2.0 IC/IB=100 IC/IB=10 VCE=1V 2.0 VBE(sat) - (Volts) 1.5 VBE - (Volts) 1.5 1.0 1.0 0.5 0.001 0.01 0.1 1 10 100 0.5 0.001 0.01 0.1 1 10 100 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC 100 Single Pulse Test at Tamb=25C VBE(on) v IC IC - Collector Current (Amps) 10 1 D.C. 1s 100ms 10ms 1.0ms 0.1ms 0.1 0.1 1 10 100 VCE - Collector Voltage (Volts) Safe Operating Area 3-308 hFE - Typical Gain 1.4 VCE(sat) - (Volts) |
Price & Availability of ZTX869
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |